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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D124
BFU510 NPN SiGe wideband transistor
Product specification Supersedes data of 2001 Nov 08 2003 Jun 12
Philips Semiconductors
Product specification
NPN SiGe wideband transistor
FEATURES * Very high power gain * Very low noise figure * High transition frequency * Emitter is thermal lead * Low feedback capacitance * 45 GHz SiGe process. APPLICATIONS * RF front end * Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.) * Radar detectors * Pagers * Satellite television tuners (SATV) * High frequency oscillators.
Marking code: A5. 2 Top view 1
MSB842
BFU510
PINNING PIN 1 2 3 4 emitter base emitter collector DESCRIPTION
handbook, halfpage
3
4
DESCRIPTION NPN SiGe wideband transistor for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Gmax NF PARAMETER collector-base voltage collector current (DC) total power dissipation DC current gain maximum power gain noise figure Ts 115 C IC = 10 mA; VCE = 2 V; Tj = 25 C IC = 0.5 mA; VCE = 2 V; f = 2 GHz; S = opt CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. open emitter collector-emitter voltage open base CONDITIONS MIN. - - - - 70 - TYP. - - 10 - 140 23 1 MAX. 9 2.3 15 35 210 - - dB dB UNIT V V mA mW Fig.1 Simplified outline SOT343R.
IC = 10 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C -
2003 Jun 12
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Philips Semiconductors
Product specification
NPN SiGe wideband transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the emitter pins. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point VALUE 1000 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature operating junction temperature Ts 115 C; note 1; see Fig.2 open base open collector CONDITIONS open emitter - - - - - -65 - MIN. 9 2.3 2.5 15 35 +150 150
BFU510
MAX. V V V
UNIT
mA mW C C
UNIT K/W
handbook, halfpage
60
MLE136
Ptot (mW) 40
20
0 0 40 80 120 Ts (C) 160
Fig.2 Power derating curve.
2003 Jun 12
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Philips Semiconductors
Product specification
NPN SiGe wideband transistor
CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE Cc Cre Gmax NF PL1 ITO Notes 1. Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG. 2. ZS and ZL are optimized for gain. PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-base leakage current DC current gain collector capacitance feedback capacitance maximum power gain; note 1 noise figure output power at 1 dB gain compression third order intercept point CONDITIONS IC = 2.5 A; IE = 0 IC = 1 mA; IB = 0 IE = 2.5 A; IC = 0 IE = 0; VCB = 4.5 V IC = 10 mA; VCE = 2 V IE = ie = 0; VCB = 2 V; f = 1 MHz IC = 0; VCB = 2 V; f = 1 MHz IC = 10 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C IC = 0.5 mA; VCE = 2 V; f = 2 GHz; S = opt IC = 5 mA; VCE = 2 V; f = 2 GHz; ZS = ZS opt; ZL = ZL opt; note 2 IC = 10 mA; VCE = 2 V; f = 2 GHz; ZS = ZS opt; ZL = ZL opt; note 2 MIN. 9 2.3 2.5 - 70 - - - - - - TYP. - - - - 140 150 25 23 1 2 7
BFU510
MAX. - - - 15 210 - - - - - -
UNIT V V V nA fF fF dB dB dBm dBm
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Philips Semiconductors
Product specification
NPN SiGe wideband transistor
BFU510
handbook, halfpage
250
MLE137
handbook, halfpage
16
MLE138
hFE 200
IC (mA) 12
(1) (2) (3) (4)
150 8 100
(5) (6) (7) (8)
4 50
(9)
0 0 5 10 IC (mA) 15
0 0 1 2 VCE (V) 3
VCE = 2 V; Tj = 25 C.
(1) IB = 180 A. (2) IB = 160 A. (3) IB = 140 A.
(4) IB = 120 A. (5) IB = 100 A. (6) IB = 80 A.
(7) IB = 60 A. (8) IB = 40 A. (9) IB = 20 A.
Fig.3
DC current gain as a function of collector current; typical values.
Fig.4 Output characteristics; typical values.
handbook, halfpage
40
MLE139
handbook, halfpage
40
MLE140
fT (GHz) 30
gain (dB) 30 MSG
20
20 s21
Gmax
10
10
0 1 IC (mA) 10
0 102
103
f (MHz)
104
VCB = 1 V; f = 2 GHz; Tamb = 25 C.
IC = 10 mA; VCE = 2 V; Tamb = 25 C.
Fig.5
Transition frequency as a function of collector current; typical values.
Fig.6
Gain as a function of frequency; typical values.
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Philips Semiconductors
Product specification
NPN SiGe wideband transistor
BFU510
handbook, halfpage
50 Cre (fF)
MLE141
handbook, halfpage
8
MLE142
40
ITO (dBm) 4
30
20 0 10
0 0 0.5 1 1.5 VCB (V) 2
-4
1
IC (mA)
10
IC = 0; f = 1 MHz; Tamb = 25 C.
VCE = 2 V; f = 2 GHz.
Fig.7
Feedback capacitance as a function of collector-base voltage; typical values.
Fig.8
Third order intercept point as a function of collector current; typical values.
handbook, halfpage
4
MLE143
PL 1dB (dBm) 2
0
-2
-4 1 IC (mA) 10
VCE = 2 V; f = 2 GHz; source and load tuned for optimum gain.
Fig.9
Output power at 1 dB gain compression as a function of collector current.
2003 Jun 12
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Philips Semiconductors
Product specification
NPN SiGe wideband transistor
BFU510
handbook, full pagewidth
90 +1 135 +0.5 10 GHz 10 GHz +0.2 +5 +2 45 1.0 0.8 0.6 0.4 0.2 180 0 0.2 0.5 5 GHz 2 5 0 10 mA 1 GHz -0.2 5 GHz 2.5 GHz -0.5 -135 -1
MLE144
0
1 mA
2.5 GHz
1 GHz -5
-2
-45 1.0
IC = 1 mA and 10 mA; VCE = 2 V; Zo = 50 .
-90
Fig.10 Common emitter input reflection coefficient (s11).
handbook, full pagewidth
90
135
45
1 GHz 10 mA 10 180 8 6 1 GHz 4 2 1 mA 10 GHz 0
-135
-45
-90 IC = 1 mA and 10 mA; VCE = 2 V; Zo = 50 .
MLE145
Fig.11 Common emitter forward transmission coefficient (s21).
2003 Jun 12
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Philips Semiconductors
Product specification
NPN SiGe wideband transistor
BFU510
handbook, full pagewidth
90
135
45
1 GHz 0.25 180 0.2 0.15 0.1 0.05
1 GHz 10 mA 1 mA 10 GHz 0
-135
-45
-90 IC = 1 mA and 10 mA; VCE = 2 V; Zo = 50 .
MLE146
Fig.12 Common emitter reverse transmission coefficient (s12).
handbook, full pagewidth
90 +1 135 +0.5 +2 45 1.0 0.8 0.6 0.4 0.2 2 5 0 1 GHz 2.5 GHz 5 GHz 1 mA -0.5 -135 -1
MLE147
+0.2 10 GHz 180 0 0.2 0.5 10 GHz
+5
0
10 mA -0.2
-5
1 GHz
2.5 GHz 5 GHz
-2
-45 1.0
-90 IC = 1 mA and 10 mA; VCE = 2 V; Zo = 50 .
Fig.13 Common emitter output reflection coefficient (s22).
2003 Jun 12
8
Philips Semiconductors
Product specification
NPN SiGe wideband transistor
BFU510
handbook, halfpage
4
MLE148
handbook, halfpage
3
MLE149
NFmin (dB) 3 f = 5 GHz
NFmin (dB) 2 f = 2 GHz
2
1 1
0 0 2 4 6 8 10 IC (mA)
0 0 2 4 f (GHz) 6
VCE = 2 V; Tamb = 25 C.
IC = 0.5 mA; VCE = 2 V; Tamb = 25 C.
Fig.14 Minimum noise figure as a function of collector current.
Fig.15 Minimum noise figure as a function of frequency.
Noise data: VCE = 2 V; IC = 1 mA; Tamb = 25 C; typical values f (GHz) 2 3 4 5 6 7 8 9 10 11 12 Fmin (dB) 1.2 1.5 1.9 2.2 2.5 2.7 3.0 3.2 3.3 3.4 3.5 opt (mag) 0.79 0.72 0.60 0.55 0.43 0.30 0.27 0.27 0.33 0.43 0.46 (deg) 36.5 57.9 81.2 103.7 133.7 168.3 -152.7 -103.2 -62.8 -38.5 -16.0 rn () 1.07 0.84 0.60 0.36 0.22 0.18 0.23 0.42 0.71 0.96 1.25
2003 Jun 12
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Philips Semiconductors
Product specification
NPN SiGe wideband transistor
SPICE parameters for the BFU510 die SEQUENCE No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 (1) 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 Note 1. Not used. PARAMETER IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RB IRB RBM RE RC XTB EG XTI CJE VJE MJE TF XTF VTF ITF PTF CJC VJC MJC XCJC TR CJS VJS MJS FC VALUE 0.277 270 1.06077 45 11.1 265 2.9 50 1.01 1 0.001 0.4 1.21 21 - 30 4.36 20.5 -2.2 1.014 3 54.3 877 0.202 2.8 0.9 0.026 0.9 30 30 577 0.239 0.44 20 8.84 500 0.6447 0.7 UNIT aA - - V mA fA - - - MV A fA - - m - eV - fF mV - ps - V A deg fF mV - - ns fF mV - -
handbook, halfpage B
BFU510
Lb
B'
C'
Lc
C
Cbe Cbe2
E'
Ccs Cce
Le
Rcs
MLE150
E
Fig.16 Package equivalent circuit SOT343R2.
List of components (see Fig.16) DESIGNATION Lb Lc Le Cbe1 Cbe2 Cce Ccs Rcs VALUE 0.90 1.02 0.33 133 65 66 100 170 nH nH nH fF fF fF fF UNIT
2003 Jun 12
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Philips Semiconductors
Product specification
NPN SiGe wideband transistor
PACKAGE OUTLINE Plastic surface mounted package; reverse pinning; 4 leads
BFU510
SOT343R
D
B
E
A
X
y
HE e
vMA
3
4
Q
A A1 c
2
wM B bp e1 b1
1
Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 b1 0.7 0.5 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 1.15 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT343R
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-05-21
2003 Jun 12
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Philips Semiconductors
Product specification
NPN SiGe wideband transistor
DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION
BFU510
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
II
Preliminary data Qualification
III
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2003 Jun 12
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Philips Semiconductors
Product specification
NPN SiGe wideband transistor
NOTES
BFU510
2003 Jun 12
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Philips Semiconductors
Product specification
NPN SiGe wideband transistor
NOTES
BFU510
2003 Jun 12
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Philips Semiconductors
Product specification
NPN SiGe wideband transistor
NOTES
BFU510
2003 Jun 12
15
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613516/03/pp16
Date of release: 2003
Jun 12
Document order number:
9397 750 11469

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